CSPESD304G-HST【PDF 2/5 页】IC TVS 4CH ESD ARRAY 5CSP

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CSPESD304

Table 1. PIN DESCRIPTIONS

PACKAGE / PINOUT DIAGRAMS

5 ? bump CSP Package

Top View

Bottom View

Pin

Name

Description

(Bumps Down View)

(Pins Up View)

A1

A3

B2

C1

C3

ESD_1

ESD_2

GND

ESD_3

ESD_4

ESD Channel 1

ESD Channel 2

Device Ground

ESD Channel 3

ESD Channel 4

Orientation

Marking

(see Note)

A

B

C

+

1 2 3

Orientation

Marking

C1

A1

A1

B2

C3

A3

CSPESD304

CSP Package

Note: Lead ? free devices are specified by using a “+” character

for the top side orientation mark.

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Storage Temperature Range

DC Package Power Rating

Parameter

Rating

? 65 to +150

200

Units

° C

mW

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 3. STANDARD OPERATING CONDITIONS

Parameter

Operating Temperature Range

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Rating

? 40 to +85

Units

° C

Symbol

Parameter

Conditions

Min

Typ

Max

Units

V DIODE

I LEAK

Diode Reverse Breakdown Voltage

Diode Leakage Current

I DIODE = 10 m A

V IN = 3.3 V, T A = 25 ° C

5.5

100

V

nA

V SIG

Signal Voltage

Positive Clamp

Negative Clamp

I DIODE = 10 mA

5.6

? 0.4

6.8

? 0.8

9.0

? 1.5

V

V ESD

V CL

In ? system ESD Withstand Voltage

a) Human Body Model, MIL ? STD ? 883, Method 3015

b) Contact Discharge per IEC 61000 ? 4 ? 2 Level 4

Clamping Voltage during ESD Discharge

MIL ? STD ? 883 (Method 3015), 8 kV

Positive Transients

Negative Transients

(Note 2)

(Note 2)

± 30

± 15

+15

? 8

kV

V

C DIODE

Diode Capacitance

At 2.5 VDC Reverse Bias,

1 MHz, 30 mVAC

22

27

32

pF

1. T A = ? 40 to +85 ° C unless otherwise specified.

2. ESD applied to input and output pins with respect to GND, one at a time.

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